光子学报
2023, 52(12): 1206004
Author Affiliations
Abstract
1 Key Laboratory of Intelligent Optical Sensing and Manipulation of the Ministry of Education, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Institute of Optical Communication Engineering, and Nanjing University-Tongding Joint Laboratory for Large-Scale Photonic Integrated Circuits, Nanjing University, Nanjing 210023, China
2 School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
3 School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
A wideband wavelength-tunable distributed feedback (DFB) semiconductor laser array based on the reconstruction-equivalent-chirp (REC) technique using a simple tuning scheme is demonstrated. It consists of 20 DFB lasers with matrix interleaving distributions, two-level cascaded Y-branch optical combiners, and one active semiconductor optical amplifier (SOA), all in-series integrated on one chip. Unlike the traditional thermal-electric cooler (TEC)-based wavelength-tuning scheme, the tunable REC-DFB laser array achieves a faster and broader continuous wavelength-tuning range using TaN thin-film heaters integrated on the AlN submount. By changing the injection current of the TaN resistor from 0 to 190 mA, the proposed tunable laser achieves a wavelength-tuning range of per channel and a total tuning of over 50 nm. This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.
distributed feedback laser array reconstruction-equivalent-chirp technique tunable laser thin-film heater integrated on the submount wide tuning range Chinese Optics Letters
2023, 21(1): 011406
南京邮电大学通信与信息工程学院,江苏 南京 210003
相较于线性贝尔 (Bell) 不等式, 非线性 Bell 不等式作为一种判据提供了一种新的判别量子关联的方法, 利用非线性 Bell 不等式来研究纠缠态的性质具有重要的现实意义。考虑带有噪声参数的纠缠态可以模拟实际的量子通信过程, 通过 Matlab 进行数值优化找到相应态的最优测量算符, 研究了噪声参数对非线性 Bell 不等式违背的影响。研究结果表明带有噪声的纠缠态在特定情况下也可以违背非线性 Bell 不等式, 而且测量数量越多, 对纠缠态的要求越苛刻, 这对于实际实验中态的选取与制备具有重要的借鉴和参考意义。
量子光学 非局域性 贝尔型不等式 非线性 最大量子违背 quantum optics non-locality Bell-like inequality non-linearity maximum quantum violation
Author Affiliations
Abstract
1 Key Laboratory of Intelligent Optical Sensing and Manipulation of the Ministry of Education, Institute of Optical Communication Engineering, Nanjing University, Nanjing 210093, China
2 National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
Until now, a high-efficiency demodulation method for fiber Bragg grating (FBG) sensors has been a challenge. In this Letter, by employing multi-peak FBGs, an FBG sensor with a partial wavelength scan is proposed and initially demonstrated. By demodulating a near-symmetrical multi-peak FBG and an asymmetrical multi-peak FBG in the strain experiment, sensor sensitivities of 1.02 pm/με and 1.01 pm/με are measured for the interrogation system, respectively. The average demodulation deviations for the two sensors are 1.81% and 0.4%, respectively. The proposed method is expected to realize high-efficiency and low-cost FBG interrogators.
fiber Bragg grating fiber sensor multi-peak fiber Bragg grating Chinese Optics Letters
2020, 18(7): 071201
1 贵州大学 大数据与信息工程学院, 贵阳 550025
2 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
通过分子束外延生长和开管式Zn扩散方法, 制备了低暗电流、宽响应范围的In0.53Ga0.47As/InP雪崩光电二极管.在0.95倍雪崩击穿电压下, 器件暗电流小于10 nA; -5 V偏压下电容密度低至1.43×10-8 F/cm2.在1 310 nm红外光照及30 V反向偏置电压下, 雪崩光电二极管器件的响应范围为50 nW~20 mW, 响应度达到1.13 A/W.得到了电荷层掺杂浓度、倍增区厚度结构参数与击穿电压和贯穿电压的关系: 随着电荷层电荷密度的增加, 器件贯穿电压线性增加, 而击穿电压线性降低; 电荷层电荷面密度为4.8×1012 cm-2时, 随着倍增层厚度的增加, 贯穿电压线性增加, 击穿电压增加.通过对器件结构优化, 雪崩光电二极管探测器实现25 V的贯穿电压和57 V的击穿电压, 且具有低暗电流和宽响应范围等特性.
雪崩光电二极管 低暗电流 宽响应范围 分子束外延 Zn扩散 Avalanche photodiode Low dark current Wide-range response Molecular beam epitaxy Zn diffusion
1 南通大学江苏省专用集成电路设计重点实验室, 江苏 南通 226019
2 中国科学院苏州纳米技术与纳米仿生研究所, 江苏 苏州 215123
介绍了GaAs基太阳能电池的原理、等效电路及性能参数，基于集成电路工艺与器件计算机辅助工艺设计（TCAD）仿真工具，设计了背场分别为InAlGaP和InAlP的两种GaAs基太阳能电池，并对其结构和性能进行仿真。同时，通过分子束外延（MBE）设备制备了这两种太阳能电池，并测试了其伏安（IV）特性。在考虑并联电阻和串联电阻对太阳能电池伏安特性的实际影响后，仿真结果与实验结果基本一致。重掺杂（原子浓度为2×1018 cm-3）的InAlGaP作为GaAs太阳能电池背场时，伏安特性曲线是典型的太阳能电池的伏安特性。重掺杂（原子浓度为2×1018 cm-3）的InAlP作为GaAs太阳能电池背场时，伏安特性曲线呈现“S”形变化。分析结果表明，背场与基层形成漂移场，加速了光生少子在电池中的输运，提高了光生电流，同时，背场将光生少子反射回有源区，降低了背表面的复合概率。当InAlP作为背场时，由于异质结的存在，影响了载流子的运输，在较小的偏压下，载流子主要通过隧道效应越过势垒，在较大的偏压下，载流子主要通过热电子发射越过势垒，因此伏安特性曲线呈现“S”形变化。
光学器件 太阳能电池 砷化镓 背场
